* 5.5 A, 20 V. RDS(ON) = 20 mΩ @ V GS = 4.5V RDS(ON) = 26 mΩ @ V GS = 2.5V
* Extended V GSS range (±12V) for battery applications
* ESD protection diode (not.
with a wide range of gate drive voltage (2.5V
– 12V).
Features
* 5.5 A, 20 V. RDS(ON) = 20 mΩ @ V G.
This N -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
– 12V).
F.
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